Product Overview
The IRF7832TRPBF is a single N-channel HEXFET power MOSFET from Infineon Technologies in a SOIC-8 surface mount package. With 30V voltage rating and 20A continuous drain current, and logic level gate drive, this device is designed for high-density low-voltage power applications.
Key Specifications
| Parameter | Value |
| Drain-Source Voltage (VDSS) | 30V |
| Continuous Drain Current (ID) | 20A @ Ta=25°C |
| On-Resistance (RDS(on)) | 4mΩ max @ VGS=10V |
| On-Resistance @ 4.5V | 4.8mΩ max |
| Gate Threshold Voltage (VGS(th)) | 1.39V to 2.32V |
| Total Gate Charge (Qg) | 34nC (typ) @ 4.5V |
| Power Dissipation (PD) | 2.5W @ Ta=25°C |
| Operating Junction Temperature | -55°C to +155°C |
| Package | SOIC-8 |
Features
- Very low on-resistance (4mΩ max)
- Logic level gate drive compatible
- Low RDS(on) at 4.5V VGS
- Fully characterized avalanche voltage and current
- Ultra-low gate impedance
- Fast switching speed
- RoHS compliant and lead-free
- Industry standard SOIC-8 package
Applications
- Intermediate bus converters (IBC)
- DC-DC converters
- Synchronous rectification
- Load switching
- Notebook computers and servers
- Point-of-load (POL) converters