Product Overview
The IRF7862TRPBF is a single N-channel HEXFET power MOSFET from Infineon Technologies in a SOIC-8 surface mount package. Rated at 30V with 21A continuous drain current, this device offers extremely low on-resistance and logic-level gate operation for high-efficiency power conversion.
Key Specifications
| Parameter | Value |
| Drain-Source Voltage (VDSS) | 30V |
| Continuous Drain Current (ID) | 21A @ Ta=25°C |
| On-Resistance (RDS(on)) | 3.3mΩ max @ VGS=10V |
| On-Resistance @ 4.5V | 4.5mΩ max |
| Gate Threshold Voltage (VGS(th)) | 1.35V to 2.35V |
| Total Gate Charge (Qg) | 30nC (typ) @ 4.5V |
| Gate-Drain Charge (Qgd) | 9.8nC |
| Power Dissipation (PD) | 2.5W @ Ta=25°C |
| Operating Junction Temperature | -55°C to +150°C |
| Package | SOIC-8 |
Features
- Extremely low on-resistance (3.3mΩ max @ 10V)
- Logic level gate drive (optimized for 5V)
- Ultra-low gate impedance
- Fully characterized avalanche voltage and current
- 100% Rg tested
- 20V VGS maximum gate rating
- RoHS compliant and lead-free
- Industry standard SOIC-8 package
Applications
- Battery protection circuits
- High-side and low-side load switch
- Notebook processor power
- Isolated DC-to-DC converters
- Synchronous rectification
- Power management systems