Product Overview
The IRF8010PBF is a single N-channel power MOSFET from Infineon Technologies with 100V voltage rating and 80A continuous drain current capability. This high-current TO-220AB device features planar cell structure for wide SOA (Safe Operating Area) and is designed for high-power switching applications.
Key Specifications
| Parameter | Value |
| Drain-Source Voltage (VDSS) | 100V |
| Continuous Drain Current (ID) | 80A @ Tc=25°C |
| On-Resistance (RDS(on)) | 15mΩ max @ VGS=10V |
| Gate Threshold Voltage (VGS(th)) | 2V to 4V |
| Total Gate Charge (Qg) | 81nC (typ) @ 10V |
| Gate-Drain Charge (Qgd) | 26nC |
| Power Dissipation (PD) | 260W @ Tc=25°C |
| Thermal Resistance (RθJC) | 0.57°C/W max |
| Operating Junction Temperature | -55°C to +175°C |
| Package | TO-220AB |
Features
- High current capability (80A continuous)
- Low on-resistance (15mΩ max)
- Planar cell structure for wide SOA
- Low gate-to-drain charge to reduce switching losses
- Fully characterized capacitance including effective COSS
- Fully characterized avalanche voltage and current
- Dynamic dv/dt rating
- Industry standard TO-220AB package
- RoHS compliant
Applications
- High frequency DC-DC converters
- UPS systems
- Motor control
- Power supplies
- Battery management
- Industrial automation