Product Overview
The IRFB3206PBF is a 60V N-channel HEXFET / StrongIRFET power MOSFET from Infineon Technologies, featuring a continuous drain current of 120A (pkg limit) and a maximum on-resistance of 3.0 mΩ at VGS=10V. Packaged in a TO-220AB through-hole enclosure, this device is optimized for high efficiency synchronous rectification and high speed power switching. The HEXFET StrongIRFET technology provides ultra-low on-resistance with high current capability, making it suitable for a wide range of industrial and commercial power electronics applications. The device features dynamic dv/dt ruggedness, full avalanche rating, and reliable thermal performance for demanding power supply and motor control designs.
Key Specifications
| Drain-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID @ 25°C) | 120A (pkg limit) |
| Continuous Drain Current (ID @ 100°C) | 85A |
| Pulsed Drain Current (IDM) | 480A |
| On-Resistance (RDS(on) max @ VGS=10V) | 3.0 mΩ |
| Gate Threshold Voltage (VGS(th)) | 2.0 – 4.0 V |
| Gate-Source Voltage (VGS) | ±20 V |
| Total Gate Charge (Qg typ) | 120 nC |
| Input Capacitance (Ciss typ) | 6860 pF |
| Power Dissipation (PD @ TC=25°C) | 300 W |
| Operating Junction Temperature | -55 to +175 °C |
| Single Pulse Avalanche Energy (EAS) | 170 mJ |
Features
- 60V drain-source voltage rating
- 120A (pkg limit) continuous drain current capability
- 3.0 mΩ maximum on-resistance at VGS=10V
- Advanced HEXFET StrongIRFET technology
- Dynamic dv/dt ruggedness rating
- 175°C operating junction temperature
- Fast switching speed
- Fully avalanche rated for reliability
- Lead-free and RoHS compliant
- TO-220AB through-hole package
Applications
- Switch Mode Power Supplies (SMPS)
- DC-DC converters
- Motor control and drives
- Uninterruptible Power Supplies (UPS)
- High efficiency synchronous rectification
- Battery management systems
- Industrial power systems
- Load switching applications
- Low voltage power supplies