Product Overview
The IRFP90N20DPBF is a 200V N-Channel HEXFET Power MOSFET from Infineon Technologies (formerly International Rectifier), part of the HEXFET® product family. This device combines optimized silicon processing with industry-standard packaging to deliver reliable performance for demanding power electronics applications. The IRFP90N20DPBF provides a well-balanced combination of voltage rating, current handling, and on-resistance, making it suitable for a wide range of power conversion and switching applications.
Manufactured using advanced power MOSFET technology, the IRFP90N20DPBF features a rugged design with fully characterized avalanche performance and dynamic dv/dt capability. The device is available in a TO-247AC package, offering proven thermal performance and board-level reliability for volume production environments.
Key Specifications
| Drain-Source Voltage (VDS) | 200 V |
| Continuous Drain Current (ID @ 25°C) | 94A |
| Pulsed Drain Current (IDM) | 380A |
| On-Resistance (RDS(on) max @ VGS=10V) | 23 mΩ |
| Gate Threshold Voltage (VGS(th)) | 3.0 – 5.0 V |
| Gate-Source Voltage (VGS) | ±30 V |
| Total Gate Charge (Qg) | 180 nC (typ) |
| Input Capacitance (Ciss) | 6040 pF |
| Power Dissipation (PD) | 580 W |
| Operating Junction Temperature | -55 to +175 °C |
| Package | TO-247AC |
Features
- 200 V drain-source voltage rating
- Advanced HEXFET®
- Low gate-drain charge for reduced switching losses
- Dynamic dv/dt ruggedness rating
- 175°C operating junction temperature (where applicable)
- Fast switching speed
- Fully avalanche rated for reliability
- Lead-free and RoHS compliant
- TO-247AC package
Applications
- High frequency DC-DC converters
- Switch Mode Power Supplies (SMPS)
- DC-DC converters
- Motor control and drives
- Power management systems
- Industrial power systems
- Load switching applications