Product Overview
The IRFR3710ZTRPBF is a 100V N-Channel HEXFET Power MOSFET from Infineon Technologies (formerly International Rectifier), part of the HEXFET® product family. This device combines optimized silicon processing with industry-standard packaging to deliver reliable performance for demanding power electronics applications. The IRFR3710ZTRPBF provides a well-balanced combination of voltage rating, current handling, and on-resistance, making it suitable for a wide range of power conversion and switching applications.
Manufactured using advanced power MOSFET technology, the IRFR3710ZTRPBF features a rugged design with fully characterized avalanche performance and dynamic dv/dt capability. The device is available in a TO-252AA (D-PAK) package, offering proven thermal performance and board-level reliability for volume production environments.
Key Specifications
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID @ 25°C) | 42A |
| Pulsed Drain Current (IDM) | — |
| On-Resistance (RDS(on) max @ VGS=10V) | 18 mΩ |
| Gate Threshold Voltage (VGS(th)) | 2.0 – 4.0 V |
| Gate-Source Voltage (VGS) | ±20 V |
| Total Gate Charge (Qg) | 69 nC (typ) |
| Power Dissipation (PD) | 140 W |
| Operating Junction Temperature | -55 to +175 °C |
| Package | TO-252AA (D-PAK) |
Features
- 100 V drain-source voltage rating
- Advanced HEXFET®
- Latest processing techniques, 175°C junction operating temperature
- Dynamic dv/dt ruggedness rating
- 175°C operating junction temperature (where applicable)
- Fast switching speed
- Fully avalanche rated for reliability
- Lead-free and RoHS compliant
- TO-252AA (D-PAK) package
Applications
- Power management, LED lighting, switch mode power supplies
- Switch Mode Power Supplies (SMPS)
- DC-DC converters
- Motor control and drives
- Power management systems
- Industrial power systems
- Load switching applications