Product Overview
The IRFZ48NPBF is a 55V N-Channel HEXFET Power MOSFET from Infineon Technologies (formerly International Rectifier), part of the HEXFET® Planar Technology product family. This device combines optimized silicon processing with industry-standard packaging to deliver reliable performance for demanding power electronics applications. The IRFZ48NPBF provides a well-balanced combination of voltage rating, current handling, and on-resistance, making it suitable for a wide range of power conversion and switching applications.
Manufactured using advanced power MOSFET technology, the IRFZ48NPBF features a rugged design with fully characterized avalanche performance and dynamic dv/dt capability. The device is available in a TO-220AB package, offering proven thermal performance and board-level reliability for volume production environments.
Key Specifications
| Drain-Source Voltage (VDS) | 55 V |
| Continuous Drain Current (ID @ 25°C) | 64A |
| Pulsed Drain Current (IDM) | 210A |
| On-Resistance (RDS(on) max @ VGS=10V) | 14 mΩ |
| Gate Threshold Voltage (VGS(th)) | 2.0 – 4.0 V |
| Gate-Source Voltage (VGS) | ±20 V |
| Total Gate Charge (Qg) | 81 nC (max) |
| Input Capacitance (Ciss) | 1970 pF |
| Power Dissipation (PD) | 130 W |
| Operating Junction Temperature | -55 to +175 °C |
| Package | TO-220AB |
Features
- 55 V drain-source voltage rating
- Advanced HEXFET® Planar Technology
- Advanced process technology, ultra low on-resistance
- Dynamic dv/dt ruggedness rating
- 175°C operating junction temperature (where applicable)
- Fast switching speed
- Fully avalanche rated for reliability
- Lead-free and RoHS compliant
- TO-220AB package
Applications
- Industrial power management, DC-DC converters, motor control
- Switch Mode Power Supplies (SMPS)
- DC-DC converters
- Motor control and drives
- Power management systems
- Industrial power systems
- Load switching applications