Product Overview
The SI2309CDS-T1-GE3 is a P-channel TrenchFET power MOSFET from Vishay Siliconix. This halogen-free device features a drain-source voltage rating of -60V and continuous drain current of -1.6A, packaged in the compact SOT-23-3 (TO-236) surface mount package. The ‘C’ version offers improved RDS(on) performance at lower gate drive voltages, making it suitable for battery-powered and low-voltage applications. The device is ideal for load switching, power management, and various portable electronics applications.
Key Specifications
| Manufacturer | Vishay Siliconix |
| Product Category | P-Channel Power MOSFET |
| FET Technology | TrenchFET |
| Drain-Source Voltage (VDS) | -60 V |
| Gate-Source Voltage (VGS) | ±20 V |
| Continuous Drain Current (TC=25°C) | -1.6 A |
| Continuous Drain Current (TA=25°C) | -1.2 A |
| RDS(on) @ VGS=-10V | 0.285Ω (typ), 0.345Ω (max) |
| RDS(on) @ VGS=-4.5V | 0.360Ω (typ), 0.450Ω (max) |
| Gate-Source Threshold Voltage | -1V (min), -3V (max) |
| Total Gate Charge (Qg) | 2.7 nC (typ), 4.1 nC (max) |
| Input Capacitance (Ciss) | 210 pF (typ) |
| Power Dissipation (TA=25°C) | 1.0 W |
| Operating Temperature Range | -55°C to +150°C |
| Package | SOT-23-3 (TO-236) |
| Halogen Free | Yes (GE3 suffix) |
Features
- P-Channel, 60V TrenchFET power MOSFET
- Low on-resistance: 0.285Ω typical at VGS=-10V
- Low threshold voltage for low-voltage operation
- Fast switching speed with low gate charge
- Low gate drive requirements: 4.5V capable
- Halogen-free and RoHS compliant
- Compact SOT-23-3 surface mount package
- Wide operating temperature: -55°C to +150°C
- 100% avalanche tested
- High dv/dt ruggedness
- Surface mountable tape and reel packaging
Applications
- Load switching and power distribution
- Battery-powered portable devices
- Power supply converter circuits
- Motor control and driver circuits
- Reverse polarity protection
- LED driver circuits
- Consumer electronics
- Industrial control systems