Product Overview
The SQ4401EY-T1-GE3 is a P-channel enhancement mode power MOSFET from Vishay Siliconix, featuring a -60V drain-source voltage rating and high current handling capability in a compact SO-8 package. This TrenchFET device is designed for applications requiring high power density and efficient switching performance. The ‘EY’ variant offers optimized RDS(on) characteristics, and the GE3 suffix indicates a lead-free, halogen-free, and RoHS-compliant device. Ideal for load switching, DC-DC converters, and power management applications.
Key Specifications
| Manufacturer | Vishay Siliconix |
| Product Category | P-Channel Power MOSFET |
| FET Technology | TrenchFET |
| Drain-Source Voltage (VDS) | -60 V |
| Gate-Source Voltage (VGS) | ±25 V |
| Continuous Drain Current (TC=25°C) | -10 A (approx) |
| RDS(on) @ VGS=-10V | ≤ 50 mΩ (typical) |
| RDS(on) @ VGS=-4.5V | ≤ 70 mΩ (typical) |
| Gate-Source Threshold Voltage | -1.0V to -3.0V |
| Total Gate Charge (Qg) | ≈ 35 nC (typical) |
| Power Dissipation (TA=25°C) | ≈ 2.5 W |
| Operating Temperature Range | -55°C to +175°C |
| Package | SO-8 (SOP-8) |
| Halogen Free | Yes (GE3 suffix) |
Features
- P-Channel, 60V TrenchFET power MOSFET
- Low on-resistance for high efficiency
- High current carrying capacity in SO-8 package
- Fast switching with low gate charge
- Low gate drive requirements: 4.5V capable
- 100% avalanche tested
- High dv/dt ruggedness
- RoHS compliant, lead-free, halogen-free (GE3)
- Surface mount SO-8 package
- Wide operating temperature range
- Tape and reel packaging (T1 suffix)
- High power density design
Applications
- DC-DC converters and power supplies
- Load switching and power distribution
- Battery management systems
- Motor control and drives
- Reverse polarity protection
- Automotive electronics
- Industrial power systems
- Telecom and datacom equipment