Product Overview
The SIHG20N50C-E3 is an N-channel power MOSFET from Vishay Siliconix, featuring a 500V drain-source voltage rating and 20A continuous drain current capability in a TO-247AC through-hole package. This device utilizes advanced Trench technology to achieve low on-resistance (0.27Ω max at VGS=10V) and low gate charge (76nC max), providing an excellent figure-of-merit (FOM) for high-voltage switching applications. The E3 suffix indicates a lead-free, RoHS-compliant device. Note: This product has been marked as obsolete (EOL) by the manufacturer.
Key Specifications
| Manufacturer | Vishay Siliconix |
| Product Category | N-Channel Power MOSFET |
| Drain-Source Voltage (VDS) | 500 V |
| Gate-Source Voltage (VGS) | ±30 V |
| Continuous Drain Current (TC=25°C) | 20 A |
| Continuous Drain Current (TC=100°C) | 11 A |
| Pulsed Drain Current | 80 A |
| RDS(on) @ VGS=10V | 0.225Ω (typ), 0.270Ω (max) |
| Gate-Source Threshold Voltage | 3.0V (min), 5.0V (max) |
| Total Gate Charge (Qg) | 76 nC (max) |
| Gate-Source Charge (Qgs) | 21 nC (typ) |
| Input Capacitance (Ciss) | 2451 pF (typ), 2942 pF (max) |
| Single Pulse Avalanche Energy | 361 mJ |
| Power Dissipation (TC=25°C) | 250 W |
| Junction Temperature Range | -55°C to +150°C |
| Package | TO-247AC (Through Hole) |
| Product Status | Obsolete / EOL |
Features
- N-Channel, 500V power MOSFET
- Low figure-of-merit: RDS(on) x Qg
- Low on-resistance: 0.225Ω typical at VGS=10V
- 100% avalanche tested
- High peak current capability: 80A pulsed
- dv/dt ruggedness
- Improved Trr/Qrr (body diode recovery)
- Improved gate charge characteristics
- High power dissipation: 250W
- RoHS compliant and halogen free
- TO-247AC through-hole package
- Wide operating temperature: -55°C to +150°C
Applications
- Switch-mode power supplies (SMPS)
- DC-DC converters
- Power factor correction (PFC)
- Motor control and drives
- Inverter circuits
- Lighting ballasts
- Solar inverters
- Industrial power systems