IRF7351TRPBF

Product Overview The IRF7351TRPBF is a dual N-channel HEXFET power MOSFET from Infineon Technologies in a SOIC-8 package. With 60V voltage rating and 8A per channel, this device offers excellent on-resistance performance for medium-voltage power switching and synchronous rectification applications. Key Specifications Parameter Value Drain-Source Voltage (VDSS) 60V Continuous Drain Current (ID) 8A @ 25°C […]
IRF7343TRPBF

Product Overview The IRF7343TRPBF is a dual P-channel HEXFET power MOSFET from Infineon Technologies in a SOIC-8 surface mount package. Rated at -25V with -5.6A per channel, this dual P-channel device provides high current capability for high-side switching applications. Key Specifications Parameter Value Drain-Source Voltage (VDSS) -25V Continuous Drain Current (ID) -5.6A @ 25°C (per […]
IRF7342TRPBF

Product Overview The IRF7342TRPBF is a dual N-channel HEXFET power MOSFET from Infineon Technologies in a SOIC-8 package. Rated at 30V with 6.7A per channel, this device offers a good balance of current capability and on-resistance for low-voltage power switching applications. Key Specifications Parameter Value Drain-Source Voltage (VDSS) 30V Continuous Drain Current (ID) 6.7A @ […]
IRF7317TRPBF

Product Overview The IRF7317TRPBF is a dual P-channel HEXFET power MOSFET from Infineon Technologies in a SOIC-8 package. Featuring 20V voltage rating and -3.9A per channel, this dual P-channel device is designed for high-side load switching and other low-voltage power management applications. Key Specifications Parameter Value Drain-Source Voltage (VDSS) -20V Continuous Drain Current (ID) -3.9A […]
IRF7316TRPBF

Product Overview The IRF7316TRPBF is a dual N-channel HEXFET power MOSFET from Infineon Technologies in a SOIC-8 package. With 30V voltage rating and 4.9A per channel capability, and featuring logic-level gate operation, this dual device is designed for compact low-voltage power switching applications. Key Specifications Parameter Value Drain-Source Voltage (VDSS) 30V Continuous Drain Current (ID) […]
IRF7309TRPBF

Product Overview The IRF7309TRPBF is a dual N-channel and P-channel complementary MOSFET pair from Infineon Technologies in a SOIC-8 package. Combining one N-channel and one P-channel MOSFET, this device is ideal for half-bridge configurations, high-side/low-side switching, and push-pull applications. Key Specifications Parameter N-Channel P-Channel Drain-Source Voltage (VDSS) 30V -30V Continuous Drain Current (ID) 5.3A -4.9A […]
IRF7103TRPBF

Product Overview The IRF7103TRPBF is a dual N-channel MOSFET from Infineon Technologies, housing two independent N-channel MOSFETs in a single SOIC-8 package. With 50V rating and 3A per channel, and featuring logic level gate drive, this device is ideal for compact low-voltage power management applications. Key Specifications Parameter Value Drain-Source Voltage (VDSS) 50V Continuous Drain […]
IRF630NPBF

Product Overview The IRF630NPBF is an N-channel HEXFET power MOSFET from Infineon Technologies with 200V voltage rating and 9.3A continuous drain current. This through-hole TO-220AB device is designed for medium-voltage power switching applications, offering a balance of voltage capability, on-resistance, and switching speed. Key Specifications Parameter Value Drain-Source Voltage (VDSS) 200V Continuous Drain Current (ID) […]
IRF530NSTRLPBF

Product Overview The IRF530NSTRLPBF is an N-channel HEXFET power MOSFET from Infineon Technologies with 100V voltage rating and 17A continuous drain current. Packaged in a D2PAK (TO-263) surface-mount form factor, this device offers a balance of voltage rating, current capability, and on-resistance for general purpose power switching applications. Key Specifications Parameter Value Drain-Source Voltage (VDSS) […]
IRF5210STRLPBF

Product Overview The IRF5210STRLPBF is a P-channel HEXFET power MOSFET from Infineon Technologies. With a 100V voltage rating and high current capability, this D2PAK surface-mount device is designed for high-side switching and various power management applications. Key Specifications Parameter Value Drain-Source Voltage (VDSS) -100V Continuous Drain Current (ID) -39A @ Tc=25°C On-Resistance (RDS(on)) 70mΩ max […]